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| SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSL6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TA=25 oC ID@TA=100 C IDM PD@TA=25 C o o Ratings -30 25 -75 -50 -300 89 0.71 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 1.4 62 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C ) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 30 _ Typ. _ - 0.03 _ _ _ _ _ _ Max. _ _ Unit V V/ C V nA uA uA m[ o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=25V VDS=-30V,VGS=0 VDS=-24 V ,VGS=0 VGS=-10V, ID=- 30A VGS=-4.5 V, ID=- 24A ID=-16A VDS=-24 V VGS=-4.5V o -1.0 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ -3.0 100 -1 -25 9 15 67 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 42 6 25 11 35 58 78 2870 960 740 34 nC _ _ _ _ VDD=-15V ID=-16A nS VGS=-10V RG=3.3[ RD=0.94[ 4590 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-24A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=-24 A,VGS=0V. IS=-16 A,VGS=0V. dl/dt=100A/us 47 43 Reverse Recovery Change Qrr _ Notes: 1. Pulse width limited by safe operating area. 300us, dutycycleO2%. 2.Pulse widthO http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Any changing of specification will not be informed individual Temperature Page 3 of 4 SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 12 /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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